The ThinkSystem S4520 Read Intensive SATA SSDs are advanced 6Gb SATA solid-state drives that use 144-layer Intel 3D NAND TLC Flash Memory technology to provide an affordable solution with industry leading performance.
This product guide provides essential presales information to understand the S4520 SSDs, their key features and specifications, components and options, and configuration guidelines. This guide is intended for technical specialists, sales specialists, sales engineers, IT architects, and other IT professionals who want to learn more about S4520 SSDs and consider their use in IT solutions.
Products specifications
| SSD capacity | 960 GB |
| SSD form factor | 3.5" |
| Interface | Serial ATA III |
| Memory type | TLC 3D NAND |
| Component for | Server |
| Data transfer rate | 6 Gbit/s |
| Random read (4KB) | 90000 IOPS |
| Random write (4KB) | 43000 IOPS |
| Random latency - read (up to) | 102 µs |
| Random latency - write (up to) | 49 µs |
| Sequential latency - read (up to) | 36 µs |
| Sequential latency - write (up to) | 36 µs |
| Uncorrectable Bit Error Rate (UBER) | < 1 per 10^17 bits read |
| Mean time between failures (MTBF) | 2000000 h |
| Drive writes per day (DWPD) | 3 |
| Certification | FCC Title 47, Part 15B, Class B EN-55035:2017 EN-55022:2006 EN-55032:2012 Low Voltage Directive (LVD) 2014/35/EU EMC Directive 2014/30/EU RoHS Directive 2011/65/EU WEEE Directive 2012/19/EU UL 60950-1, 2nd Edition, 2014-10-14 CSA C22.2 No. 60950-1-07, 2nd Edition, 2014-010 UL/CSA 62368-1, 2nd Edition AS/NZ CISPR 32:2015 AS/NZ CISPR 22:2009 +A1:2010 Taiwan BSMI EMC standard CNS 13438 Korea KCC Article 11.1 Morocco Decree # 2574-14 (EMC) Canada ICES-003 Japan VCCI China EFUP |
| Width | 174 mm |
| Depth | 133 mm |
| Height | 63 mm |
| Weight | 434 g |
| Endurance rating | 5.3 PB |
| Operating temperature (T-T) | 0 - 70 °C |
| Storage relative humidity (H-H) | 5 - 95% |
| Operating vibration | 2.17 G |
| Non-operating vibration | 3.13 G |
| Operating shock | 1000 G |
| Non-operating shock | 1000 G |
| Power consumption (write) | 3 W |
